ARCHIMEDES at PCIM 2026
- Jul 16
- 1 min read
At this year's PCIM, Diane BONKOUNGOU from CEA represented the ARCHIMEDES project by presenting a poster entitled "SiC MOSFET Gate Switching Stress with In-Situ Threshold Voltage Monitoring and Self-Heating Analysis."
The work focuses on the reliability of silicon carbide (SiC) MOSFETs, which are known to experience parameter drifts—particularly in threshold voltage and on-resistance—when subjected to electrical and thermal stress. To investigate these degradation mechanisms, the research presents a detailed Gate Switching Stress (GSS) testing methodology incorporating in-situ threshold voltage measurements.
A custom-developed test bench enables the application of high gate stress, allowing for accurate monitoring of device behavior under demanding operating conditions. The study also examines the impact of self-heating during GSS testing at 500 kHz, demonstrating how temperature effects can significantly influence the accuracy of aging characterization.
By combining advanced stress testing with in-situ monitoring, the proposed methodology provides valuable insights into the reliability and aging mechanisms of SiC MOSFETs, contributing to the development of more accurate lifetime and reliability models for next-generation power semiconductor devices.
The presentation highlighted ARCHIMEDES' ongoing research efforts and its contribution to advancing power electronics reliability at one of the field's leading international events.
